| PART |
Description |
Maker |
| LNA4801L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| TSAL5300 TSAL530009 TSAL5300-MSZ |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5300-GSZ TSAL5300 TSAL5300-FSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| TSAL5300 TSAL5300-MSZ TSAL530008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL7400 TSAL740008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
